PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS V= DSS ID25 = ≤ RDS(on) trr ≤ 500 V 30 A 200 mΩ 200 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGSS V GSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD M d FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25°
Datasheet Details
Part number:
IXFT30N50P, IXFH30N50P
Manufacturer:
IXYS
File Size:
367.16 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFT30N50P, IXFH30N50P.
Please refer to the document for exact specifications by model.