Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS(on) ≤ ≤ trr www.DataSheet4U.com 600 V 30 A 240 mΩ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 2
Datasheet Details
Part number:
IXFT30N60P, IXFH30N60P
Manufacturer:
IXYS
File Size:
246.49 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFT30N60P, IXFH30N60P.
Please refer to the document for exact specifications by model.