* 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 6
* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 0.102 2 -0.206 ±100 TJ = 25°C TJ = 125°C 200 1 0.15 0.16 4 V %/K V %/K nA mA mA W
IXFT30N50 Datasheet (133.30 KB)
IXFT30N50
IXYS
133.30 KB
Power mosfet.
www.DataSheet4U.com
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500.
📁 Related Datasheet
IXFT30N50P - Power MOSFET
(IXYS)
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS
V= .
IXFT30N50Q3 - Power MOSFET
(IXYS Corporation)
.DataSheet.co.kr
Advance Technical Information
HiperFETTM Power MOSFETs Q3-Class
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectif.
IXFT30N40Q - Power MOSFET
(IXYS)
..
HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
IXFH 30N40Q IXFT 30N40Q
VDSS ID.
IXFT30N60P - Power MOSFET
(IXYS)
Advance Technical Information
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH 30N60P IXFT 30N60P.
IXFT30N60Q - Power MOSFET
(IXYS)
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
Preliminary Data Sheet
IXFH 30N60Q IXFT 30N60Q
VDSS .
IXFT30N60X - Power MOSFET
(IXYS)
X-Class HiPerFETTM Power MOSFET
Preliminary Technical Information
IXFT30N60X IXFQ30N60X IXFH30N60X
VDSS = ID25 = RDS(on)
600V 30A 155m
N-Channe.
IXFT30N85XHV - Power MOSFET
(IXYS)
X-Class HiPerFETTM Power MOSFET
Advance Technical Information
IXFT30N85XHV IXFH30N85X
VDSS =
ID25 = RDS(on)
850V 30A 220m
N-Channel Enhancemen.
IXFT320N10T2 - Power MOSFET
(IXYS Corporation)
TrenchT2TM HiperFETTM Power MOSFET
IXFH320N10T2 IXFT320N10T2
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
VDSS = ID25 =
RDS(on) .
