IXFT30N85XHV Datasheet - IXYS

IXFT30N85XHV - Power MOSFET

X-Class HiPerFETTM Power MOSFET Advance Technical Information IXFT30N85XHV IXFH30N85X VDSS = ID25 =  RDS(on) 850V 30A 220m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268HV (IXFT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum.

IXFT30N85XHV Features

* International Standard Packages

* High Voltage Package

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Convert

IXFT30N85XHV-IXYS.pdf