IXFT30N60Q, IXFH30N60Q Datasheet - IXYS

IXFT30N60Q Power MOSFET

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet IXFH 30N60Q IXFT 30N60Q VDSS ID25 RDS(on) = 600 V = 30 A = 0.23 Ω trr ≤ 250 ns Symbol VVDDGSRS VVGGSSM IIDDM25 IAR EAR EAS dv/dt PD TJ TTJsMtg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TTJJ = 25°C to 150°C = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TTCC = 25°C = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, .

IXFH30N60Q-IXYS.pdf