IXGH32N60AU1S Datasheet - IXYS Corporation

IXGH32N60AU1S HiPerFAST IGBT

IXGH 32N60AU1 IXGH 32N60AU1S HiPerFASTTM IGBT with Diode Combi Pack VCES IC25 VCE(sat) tfi = = = = 600 V 60 A 2.9V 125 ns TO-247 SMD (32N60AU1S) www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ±20 ±30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 +150 150 -55 +150 300 1.13/10 TO-2.

IXGH32N60AU1S Features

* q International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD q High frequency IGBT and antiparallel FRED in one package q High current handling capability q 2nd generation HDMOSTM process q MOS Gate turn-on - drive simplicity Applications q AC motor speed control q DC ser

IXGH32N60AU1S Datasheet (68.16 KB)

IXGH32N60AU1S Datasheet Preview — Preview of IXGH32N60AU1S PDF

Datasheet Details

Part number:

IXGH32N60AU1S

Manufacturer:

IXYS Corporation

File Size:

68.16 KB

Description:

Hiperfast igbt.

📁 Related Datasheet

IXGH32N60AU1 HiPerFAST IGBT (IXYS Corporation)

IXGH32N60A HiPerFAST IGBT (IXYS Corporation)

IXGH32N60AS HiPerFAST IGBT (IXYS Corporation)

IXGH32N60B HiPerFAST IGBT (IXYS Corporation)

IXGH32N60BD1 HiPerFAST IGBT (IXYS Corporation)

IXGH32N60BU1 HiPerFAST IGBT (IXYS Corporation)

IXGH32N60C IGBT (IXYS Corporation)

IXGH32N120A3 Ultra-Low Vsat PT IGBT (IXYS)

IXGH32N170 High Voltage IGBT (IXYS Corporation)

IXGH32N170A High Voltage IGBT (IXYS)

TAGS

IXGH32N60AU1S HiPerFAST IGBT IXYS Corporation

Image Gallery

IXGH32N60AU1S Distributor