IXGH32N60AU1S, IXGH32N60AU1 Datasheet - IXYS Corporation

IXGH32N60AU1S - HiPerFAST IGBT

IXGH 32N60AU1 IXGH 32N60AU1S HiPerFASTTM IGBT with Diode Combi Pack VCES IC25 VCE(sat) tfi = = = = 600 V 60 A 2.9V 125 ns TO-247 SMD (32N60AU1S) www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ±20 ±30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 +150 150 -55 +150 300 1.13/10 TO-2.

IXGH32N60AU1S Features

* q International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD q High frequency IGBT and antiparallel FRED in one package q High current handling capability q 2nd generation HDMOSTM process q MOS Gate turn-on - drive simplicity Applications q AC motor speed control q DC ser

IXGH32N60AU1_IXYSCorporation.pdf