IXGH32N60B Datasheet - IXYS Corporation

IXGH32N60B - HiPerFAST IGBT

HiPerFASTTM IGBT IXGH32N60B VCES IC25 VCE(sat) tfi = = = = 600 V 60 A 2.5 V 80 ns www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 +150 150 -55 +150 300 V V V V A A A A W °C °C .

IXGH32N60B Features

* International standard package JEDEC TO-247 AD

* High current handling capability

* Newest generation HDMOSTM process

* MOS Gate turn-on - drive simplicity Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3)

IXGH32N60B_IXYSCorporation.pdf