Datasheet4U Logo Datasheet4U.com

IXGH32N60BU1 Datasheet - IXYS Corporation

IXGH32N60BU1 HiPerFAST IGBT

HiPerFASTTM IGBT with Diode IXGH 32N60BU1 VCES IC25 VCE(sat) tfi = 600 V = 60 A = 2.3 V = 80 ns www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 +150 150 -55 +150 300 1.13/10 6.

IXGH32N60BU1 Features

* z International standard packages JEDEC TO-247 SMD z High frequency IGBT and antiparallel FRED in one package z High current handling capability z Newest generation HDMOSTM process z MOS Gate turn-on - drive simplicity Applications z AC motor speed control z DC servo and robot drives z DC choppers z

IXGH32N60BU1_IXYSCorporation.pdf

Preview of IXGH32N60BU1 PDF
IXGH32N60BU1 Datasheet Preview Page 2 IXGH32N60BU1 Datasheet Preview Page 3

Datasheet Details

Part number:

IXGH32N60BU1

Manufacturer:

IXYS Corporation

File Size:

173.57 KB

Description:

Hiperfast igbt.

📁 Related Datasheet

IXGH32N60B HiPerFAST IGBT (IXYS Corporation)

IXGH32N60BD1 HiPerFAST IGBT (IXYS Corporation)

IXGH32N60A HiPerFAST IGBT (IXYS Corporation)

IXGH32N60AS HiPerFAST IGBT (IXYS Corporation)

IXGH32N60AU1 HiPerFAST IGBT (IXYS Corporation)

IXGH32N60AU1S HiPerFAST IGBT (IXYS Corporation)

IXGH32N60C IGBT (IXYS Corporation)

IXGH32N120A3 Ultra-Low Vsat PT IGBT (IXYS)

TAGS

IXGH32N60BU1 IXGH32N60BU1 HiPerFAST IGBT IXYS Corporation

IXGH32N60BU1 Distributor