IXGH32N60BU1 Datasheet - IXYS Corporation

IXGH32N60BU1 HiPerFAST IGBT

HiPerFASTTM IGBT with Diode IXGH 32N60BU1 VCES IC25 VCE(sat) tfi = 600 V = 60 A = 2.3 V = 80 ns www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 +150 150 -55 +150 300 1.13/10 6.

IXGH32N60BU1 Features

* z International standard packages JEDEC TO-247 SMD z High frequency IGBT and antiparallel FRED in one package z High current handling capability z Newest generation HDMOSTM process z MOS Gate turn-on - drive simplicity Applications z AC motor speed control z DC servo and robot drives z DC choppers z

IXGH32N60BU1 Datasheet (173.57 KB)