IXGQ20N120BD1 Datasheet - IXYS Corporation

IXGQ20N120BD1 High Voltage IGBT

High Voltage IGBT with Diode IXGQ 20N120B IXGQ 20N120BD1 VCES IC25 VCE(sat) tfi(typ) = 1200 = 40 = 3.4 = 160 V A V ns BD1 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 40 20 100 ICM = 40 @0.8 VCES 190 -55 +150 150 -55 +150 V V V V A A A .

IXGQ20N120BD1 Features

* z z C = Collector TAB = Collector Mounting torque 1.13/10 Nm/lb.in. 300 6 z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s www.DataSheet4U.com z Weight International standard package IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Ri

IXGQ20N120BD1 Datasheet (632.31 KB)