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IXGQ28N120B High Voltage IGBT

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Description

High Voltage IGBT with Diode IXGQ 28N120B IXGQ 28N120BD1 V CES IC25 VCE(sat) tfi(typ) = 1200 V = 50 A = 3.5 V = 160 ns Symbol Test Conditions VCE.

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Datasheet Specifications

Part number
IXGQ28N120B
Manufacturer
IXYS
File Size
506.16 KB
Datasheet
IXGQ28N120B-IXYS.pdf
Description
High Voltage IGBT

Features

* z International standard package z IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low I RM Symbol VGE(th) ICES IGES VCE(sat) Test Conditions Characteristi

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