IXGQ150N33TC, IXGA150N33TC - IGBT

IXYS

IXGQ150N33TC Description

Trench Gate High Speed IGBT For PDP Applications IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 VCES = ICP = VCE(sat) ≤ 330V 400A 1.8V Symbol VCES VG.

IXGQ150N33TC Features

* International standard packages
* Low VCE(sat) - for minimum on-state conduction losses

IXGQ150N33TC Applications

* IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 VCES = ICP = VCE(sat) ≤ 330V 400A 1.8V Symbol VCES VGEM IC25 ICP IDP IC(RMS) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C Transient TC = 25°C, IGBT chip capability TJ ≤ 150°C, tp < 10 μs TJ ≤ 150°C, tp < 10 μs Lead current limi

📥 Download Datasheet

IXGQ150N33TC Datasheet Preview — This datasheet PDF includes multiple part numbers: IXGQ150N33TC, IXGA150N33TC. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: IXGQ150N33TC, IXGA150N33TC
Manufacturer: IXYS
File Size: 194.53 KB
Datasheet: IXGA150N33TC-IXYS.pdf
Description: IGBT
Note: This datasheet PDF includes multiple part numbers: IXGQ150N33TC, IXGA150N33TC.
Please refer to the document for exact specifications by model.

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IGBT IXYS

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IXGQ150N33TC Stock/Price