IXGQ90N33TCD1 Datasheet - IXYS Corporation

IXGQ90N33TCD1 IGBTs

Trench Gate, High Speed, IGBTs For PDP Applications IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 VCES = ICP = VCE(sat) ≤ 90N33TC 330V 360A 1.80V 90N33TCD1 Symbol VCES VGES VGEM IC25 IC(RMS) IC110 ICP ICP PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC= 25°C (Chip Capability) Lead Current Limit TC = 110°C TC < 150°C, tp < 10μs TC < 150°C, tp < 10μs, Duty cycle < 1% TC = 25°C Maximum Ratings 330 ±20 ±30 90 75 38 60 360 200 -55 +150 150 -55 +150 V V V A.

IXGQ90N33TCD1 Features

* Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C VCE = 0V, VGE = ±20V VGE = 15V, IC = 20A, Note 1 IC = 45A TJ = 125°C IC = 90A TJ = 125°C 1.54 1.54 1.82 1.95 Characteristic Values Min. Typ. Max. 330 3

IXGQ90N33TCD1 Datasheet (138.81 KB)