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IXGQ85N33PCD1 Datasheet - IXYS

IXGQ85N33PCD1, High Speed IGBT

Advance Technical Information PolarTM High Speed IGBT with Anti-Parallel Diode for PDP Sustain Circuit IXGQ85N33PCD1 VCES ICP VCE(sat) = = ≤ 330 .
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IXGQ85N33PCD1-IXYS.pdf

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Datasheet Details

Part number:

IXGQ85N33PCD1

Manufacturer:

IXYS

File Size:

139.11 KB

Description:

High Speed IGBT

Features

* International standard package
* Fast tfi for minimum turn off switching losses
* MOS Gate turn-on - drive simplicity
* Positive dVsat/dt for paralleling 260 1.3/10 5.5 Nm/lb. in. g ≤ Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic V

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