IXGQ150N33TCD1 Datasheet - IXYS

IXGQ150N33TCD1 IGBT

Trench Gate High Speed IGBT For PDP Applications IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 VCES = ICP = VCE(sat) ≤ 330V 400A 1.8V Symbol VCES VGEM IC25 ICP IDP IC(RMS) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C Transient TC = 25°C, IGBT chip capability TJ ≤ 150°C, tp < 10 μs TJ ≤ 150°C, tp < 10 μs Lead current limit TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220)(TO-3P) TO-263 TO-3P 150N33TC 150N33TCD1 Maximum .

IXGQ150N33TCD1 Features

* International standard packages

* Low VCE(sat) - for minimum on-state conduction losses

* Fast switching Applications

IXGQ150N33TCD1 Datasheet (194.53 KB)