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IXGQ90N33TC

IGBTs

IXGQ90N33TC Features

* Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C VCE = 0V, VGE = ±20V VGE = 15V, IC = 20A, Note 1 IC = 45A TJ = 125°C IC = 90A TJ = 125°C 1.54 1.54 1.82 1.95 Characteristic Values Min. Typ. Max. 330 3

IXGQ90N33TC Datasheet (138.81 KB)

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Datasheet Details

Part number:

IXGQ90N33TC

Manufacturer:

IXYS Corporation

File Size:

138.81 KB

Description:

Igbts.
Trench Gate, High Speed, IGBTs For PDP Applications IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 VCES = ICP = VCE(sat) ≤ 90N33TC 330V 360A 1.80V 90N33TCD1.

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IXGQ90N33TC IGBTs IXYS Corporation

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