IXGQ28N120BD1 Datasheet - IXYS

IXGQ28N120BD1 High Voltage IGBT

High Voltage IGBT with Diode IXGQ 28N120B IXGQ 28N120BD1 V CES IC25 VCE(sat) tfi(typ) = 1200 V = 50 A = 3.5 V = 160 ns Symbol Test Conditions VCES VCGR V GES VGEM IC25 IC110 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms V GE = 15 V, T J = 125°C, R G = 10 Ω Clamped inductive load PC TC = 25°C TJ TJM Tstg M Mounting torque d Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s.

IXGQ28N120BD1 Features

* z International standard package z IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low I RM Symbol VGE(th) ICES IGES VCE(sat) Test Conditions Characteristi

IXGQ28N120BD1 Datasheet (506.16 KB)