IXGQ240N30PB
IXYS
170.09kb
High speed igbt.
📁 Related Datasheet
IXGQ20N120B - High Voltage IGBT
(IXYS Corporation)
High Voltage IGBT with Diode IXGQ 20N120B IXGQ 20N120BD1
VCES IC25 VCE(sat)
tfi(typ)
= 1200 = 40 = 3.4 = 160
V A V ns
BD1
Symbol VCES VCGR VGES V.
IXGQ20N120BD1 - High Voltage IGBT
(IXYS Corporation)
High Voltage IGBT with Diode IXGQ 20N120B IXGQ 20N120BD1
VCES IC25 VCE(sat)
tfi(typ)
= 1200 = 40 = 3.4 = 160
V A V ns
BD1
Symbol VCES VCGR VGES V.
IXGQ28N120B - High Voltage IGBT
(IXYS)
High Voltage IGBT with Diode
IXGQ 28N120B IXGQ 28N120BD1
V CES
IC25 VCE(sat)
tfi(typ)
= 1200 V = 50 A = 3.5 V = 160 ns
Symbol
Test Conditions
VCE.
IXGQ28N120BD1 - High Voltage IGBT
(IXYS)
High Voltage IGBT with Diode
IXGQ 28N120B IXGQ 28N120BD1
V CES
IC25 VCE(sat)
tfi(typ)
= 1200 V = 50 A = 3.5 V = 160 ns
Symbol
Test Conditions
VCE.
IXGQ150N33TC - IGBT
(IXYS)
Trench Gate High Speed
IGBT
For PDP Applications
IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1
VCES =
ICP
=
VCE(sat) ≤
330V 400A 1.8V
Symbol
VCES
VG.
IXGQ150N33TCD1 - IGBT
(IXYS)
Trench Gate High Speed
IGBT
For PDP Applications
IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1
VCES =
ICP
=
VCE(sat) ≤
330V 400A 1.8V
Symbol
VCES
VG.
IXGQ85N33PCD1 - High Speed IGBT
(IXYS)
Advance Technical Information
PolarTM High Speed
IGBT
with Anti-Parallel Diode
for PDP Sustain Circuit
IXGQ85N33PCD1
VCES ICP VCE(sat)
= = ≤
330 .
IXGQ90N27PB - IGBT
(IXYS)
Preliminary Technical Information PolarTM
..
IGBT
for PDP Applications
IXGQ90N27PB
VCES = = ICP VCE(sat) ≤
270 V 340 A 2.1 V
Sy.
IXGQ90N33TC - IGBTs
(IXYS Corporation)
Trench Gate, High Speed, IGBTs
For PDP Applications
IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1
VCES = ICP = VCE(sat) ≤
90N33TC
330V 360A 1.80V
90N33TCD1.
IXGQ90N33TCD1 - IGBTs
(IXYS Corporation)
Trench Gate, High Speed, IGBTs
For PDP Applications
IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1
VCES = ICP = VCE(sat) ≤
90N33TC
330V 360A 1.80V
90N33TCD1.
