IXSH50N60B Datasheet - IXYS Corporation

IXSH50N60B Short Circuit SOA Capability

IGBT High Speed Short Circuit SOA Capability mêÉäáãáå~êó=Ç~í~=ëÜÉÉí IXSH 50N60B V`bp I`OR V`bEë~íF = 600 V = 75 A = 2.5 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C .

IXSH50N60B Features

* µs W °C °C °C International standard package JEDEC TO-247 AD, and TO-247 SMD for surface mount Guaranteed Short Circuit SOA capability High frequency IGBT Latest generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Applications Mountin

IXSH50N60B_IXYSCorporation.pdf