IXSK80N60B Datasheet - IXYS Corporation

IXSK80N60B High Current IGBT Short Circuit SOA Capability

www.DataSheet4U.com High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 VCE(sat) = 600 V = 160 A = 2.5 V Symbol VCES VCGR VCES VGEM IC25 IC90 IL(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = = = = 25°C 90°C 90°C 25°C, 1 ms (silicon chip capability) (silicon chip capability) (silicon chip capability) Maximum Ratings 600 600 ± 20 ± 30 160 80 75 300 .

IXSK80N60B Features

* ! International standard packages ! Very high current, fast switching IGBT ! Low VCE(sat) - for minimum on-state conduction losses ! MOS Gate turn-on - drive simplicity Applications ! AC motor speed control ! DC servo and robot drives ! DC choppers ! Uninterruptible power supplies (UPS) ! Switch-mod

IXSK80N60B_IXYSCorporation.pdf