IXTA62N15P
IXYS Corporation
272.54kb
Polarht power mosfet.
TAGS
📁 Related Datasheet
IXTA62N15P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 40mΩ ·Fully characterized avalanche voltage and current ·100%.
IXTA60N10T - Power MOSFET
(IXYS)
TrenchTM Power MOSFET
IXTA60N10T IXTP60N10T
N-Channel Enhancement Mode Avalanche Rated
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL.
IXTA60N10T - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXTA60N10T
·FEATURES ·With TO-263(D2PAK) packaging ·Low gate charge ·High speed switching ·Lo.
IXTA60N20T - Power MOSFET
(IXYS)
TrenchTM Power MOSFET
IXTA60N20T IXTP60N20T IXTQ60N20T
VDSS ID25
RDS(on)
= 200V = 60A ≤ 40mΩ
TO-263 AA (IXTA)
N-Channel Enhancement Mode For PDP.
IXTA60N20T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 40mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTA64N10L2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA64N10L2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 32mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTA64N10L2 - Power MOSFET
(IXYS)
Preliminary Technical Information
LinearL2TM Power MOSFET w/Extended FBSOA
IXTA64N10L2 IXTP64N10L2 IXTH64N10L2
VDSS = 100V
ID25 = 64A RDS(on) 32m.
IXTA6N100D2 - N-Channel MOSFET
(IXYS)
Depletion Mode MOSFET
N-Channel
IXTA6N100D2 IXTP6N100D2 IXTH6N100D2
D
VDSX = ID(on) >
RDS(on)
1000V 6A
2.2
TO-263 AA (IXTA)
G S
G S D (Tab)
T.
IXTA6N100D2HV - Power MOSFET
(IXYS)
High Voltage Depletion Mode Power MOSFET
IXTA6N100D2HV
D
VDSX = ID(on) >
RDS(on)
1000V 6A
2.2
N-Channel
G S
Symbol
VDSX VGSX VGSM
PD
TJ TJM T.
IXTA6N50D2 - N-Channel MOSFET
(IXYS Corporation)
Depletion Mode MOSFET
N-Channel
IXTA6N50D2 IXTP6N50D2 IXTH6N50D2
D
VDSX = ID(on) >
RDS(on)
500V 6A
550m
TO-263 AA (IXTA)
Symbol
VDSX VGSX VGSM.