IXTA6N50D2
IXYS Corporation
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N-channel mosfet.
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IXTA6N50P - Power MOSFET
(IXYS)
PolarHVTM Power MOSFET
IXTA 6N50P IXTP 6N50P
N-Channel Enhancement Mode Avalanche Rated
VDSS = 500 ID25 = 6 RDS(on) ≤ 1.1
V A
Ω
Symbol VDSS VDGR .
IXTA6N50P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 1.1Ω@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTA6N100D2 - N-Channel MOSFET
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Depletion Mode MOSFET
N-Channel
IXTA6N100D2 IXTP6N100D2 IXTH6N100D2
D
VDSX = ID(on) >
RDS(on)
1000V 6A
2.2
TO-263 AA (IXTA)
G S
G S D (Tab)
T.
IXTA6N100D2HV - Power MOSFET
(IXYS)
High Voltage Depletion Mode Power MOSFET
IXTA6N100D2HV
D
VDSX = ID(on) >
RDS(on)
1000V 6A
2.2
N-Channel
G S
Symbol
VDSX VGSX VGSM
PD
TJ TJM T.
IXTA60N10T - Power MOSFET
(IXYS)
TrenchTM Power MOSFET
IXTA60N10T IXTP60N10T
N-Channel Enhancement Mode Avalanche Rated
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL.
IXTA60N10T - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXTA60N10T
·FEATURES ·With TO-263(D2PAK) packaging ·Low gate charge ·High speed switching ·Lo.
IXTA60N20T - Power MOSFET
(IXYS)
TrenchTM Power MOSFET
IXTA60N20T IXTP60N20T IXTQ60N20T
VDSS ID25
RDS(on)
= 200V = 60A ≤ 40mΩ
TO-263 AA (IXTA)
N-Channel Enhancement Mode For PDP.
IXTA60N20T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 40mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTA62N15P - PolarHT Power MOSFET
(IXYS Corporation)
..
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA 62N15P IXTP 62N15P IXTQ 62N15P
VDSS ID25
RDS(on)
= 150.
IXTA62N15P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 40mΩ ·Fully characterized avalanche voltage and current ·100%.