IXTA6N100D2HV Datasheet - IXYS

IXTA6N100D2HV Power MOSFET

High Voltage Depletion Mode Power MOSFET IXTA6N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 6A 2.2 N-Channel G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient Maximum Ratings 1000 V 20 V 30 V TC = 25C 300 W - 55 +150 C 150 C - 55 +150 C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force 10..65 / 2.2..14.6 N/lb. 2.5 g Symbol Test Condition.

IXTA6N100D2HV Features

*  High Voltage package

* High Blocking Voltage

* Normally ON Mode

*  High Voltage package Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Audio Amplifiers

* Start-Up Circuits

* Protection

IXTA6N100D2HV Datasheet (224.94 KB)

IXTA6N100D2HV Datasheet Preview — Preview of IXTA6N100D2HV PDF

Datasheet Details

Part number:

IXTA6N100D2HV

Manufacturer:

IXYS

File Size:

224.94 KB

Description:

Power mosfet.

📁 Related Datasheet

IXTA6N100D2 N-Channel MOSFET (IXYS)

IXTA6N50D2 N-Channel MOSFET (IXYS Corporation)

IXTA6N50P Power MOSFET (IXYS)

IXTA6N50P N-Channel MOSFET (INCHANGE)

IXTA60N10T Power MOSFET (IXYS)

IXTA60N10T N-Channel MOSFET (INCHANGE)

IXTA60N20T Power MOSFET (IXYS)

IXTA60N20T N-Channel MOSFET (INCHANGE)

TAGS

IXTA6N100D2HV Power MOSFET IXYS

IXTA6N100D2HV Distributor