* z z z z z High Current Handling Capability 175°C Operating Temperature Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS
IXTA60N20T Datasheet (162.02 KB)
IXTA60N20T
IXYS
162.02 KB
Power mosfet.
TrenchTM Power MOSFET
IXTA60N20T IXTP60N20T IXTQ60N20T
VDSS ID25
RDS(on)
= 200V = 60A ≤ 40mΩ
TO-263 AA (IXTA)
N-Channel Enhancement Mode For PDP.
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