IXTH250N075T Datasheet - IXYS Corporation

IXTH250N075T Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH250N075T IXTQ250N075T VDSS = ID25 = RDS(on) ≤ 75 250 4.0 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, .

IXTH250N075T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Of

IXTH250N075T Datasheet (194.83 KB)