IXTH5N100 Standard Power MOSFET

IXYS Corporation

Description

Standard Power MOSFET VDSS IXTH / IXTM 5N100 IXTH / IXTM 5N100A 1000 V 1000 V ID25 5A 5A RDS(on) 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol VD.

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Datasheet Specifications

Part number: IXTH5N100
Manufacturer: IXYS Corporation
File Size: 104.20 KB
Datasheet: IXTH5N100_IXYSCorporation.pdf
Description: Standard Power MOSFET

Features

* l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1

Applications

* l VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8
* VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 l l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l 5N10

IXTH5N100 Distributors

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IXTH5N100 Standard Power MOSFET IXYS Corporation

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