IXTH7P50 P-Channel MOSFET

IXYS Corporation

Description

VDSS ID25 RDS(on) Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 7P50 IXTH 8P50 -500V -7 A 1.5 Ω -500V -8 A 1.2 Ω Symbol V.

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Datasheet Specifications

Part number: IXTH7P50
Manufacturer: IXYS Corporation
File Size: 75.09 KB
Datasheet: IXTH7P50_IXYSCorporation.pdf
Description: P-Channel MOSFET

Features

* International standard package
* Low R HDMOS process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) TM DS (on) JEDEC TO-247 AD Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Mounting torque 300 1.13/1

Applications

* VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = -250 µA BVDSS Temperature Coefficient V DS = VGS, ID = -250 µA VGS(th) Temperature Coefficient V GS = ±20 VDC, VDS = 0 V DS = 0.8 VDSS V GS = 0 V V GS = -10 V, ID = 0.5 ID25
* High side switching
* Push-pull amplifiers
* DC c

IXTH7P50 Distributors

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IXTH7P50 P-Channel MOSFET IXYS Corporation

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