* International standard package
* Low R HDMOS process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) TM DS (on) JEDEC TO-247 AD Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/1
IXTH7P50
IXYS Corporation
75.09 KB
P-channel mosfet.
VDSS
ID25 RDS(on)
Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH 7P50 IXTH 8P50
-500V -7 A 1.5 Ω -500V -8 A 1.2 Ω
Symbol V.
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