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IXTH75N15 Datasheet - IXYS

IXTH75N15, High Current Power MOSFET

High Current Power MOSFET N-Channel Enhancement Mode IXTH 75N15 IXTT 75N15 VDSS ID25 RDS(on) = 150 V = 75 A = 23 mΩ Symbol VDSS VDGR VGS VGSM ID25.
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IXTH75N15-IXYS.pdf

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Datasheet Details

Part number:

IXTH75N15

Manufacturer:

IXYS

File Size:

579.71 KB

Description:

High Current Power MOSFET

Features

* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µ

IXTH75N15 Distributors

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