IXTH76P10T - Power MOSFET
TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-268HV TO-247.
IXTH76P10T Features
* International Standard Packages
* Avalanche Rated
* Extended FBSOA
* Fast Intrinsic Diode
* Low RDS(ON) and QG
Advantages
* Easy to Mount
* Space Savings
Applications
* High-Side Switching
* Push Pull Amplifiers
* DC Choppers
* Automatic Test Equipment