IXTH76P10T Datasheet - IXYS

IXTH76P10T Power MOSFET

TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-268HV TO-247.

IXTH76P10T Features

* International Standard Packages

* Avalanche Rated

* Extended FBSOA

* Fast Intrinsic Diode

* Low RDS(ON) and QG Advantages

* Easy to Mount

* Space Savings Applications

* High-Side Switching

* Push Pull Amplifiers

* DC Choppers

* Automatic Test Equipment

IXTH76P10T Datasheet (332.70 KB)

IXTH76P10T Datasheet Preview — Preview of IXTH76P10T PDF

Datasheet Details

Part number:

IXTH76P10T

Manufacturer:

IXYS

File Size:

332.70 KB

Description:

Power mosfet.

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IXTH76P10T Power MOSFET IXYS

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