* 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 300 0.7/6 10
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* International standard package
* Fast switching times Applications Symbol Test Conditions (TJ = 25°C unless otherwis
IXTK180N15 Datasheet (106.79 KB)
IXTK180N15
IXYS Corporation
106.79 KB
Power mosfet.
Advance Technical Information
www.DataSheet4U.com
High Current MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 180N15
VDSS ID25
RDS(on)
= 150 V = 180.
📁 Related Datasheet
IXTK180N15 N-Channel MOSFET (INCHANGE)
IXTK180N15P PolarHT Power MOSFET (IXYS)
IXTK100N25P N-Channel MOSFET (IXYS Corporation)
IXTK102N30P PolarHT Power MOSFET (IXYS Corporation)
IXTK102N30P N-Channel MOSFET (INCHANGE)
IXTK102N65X2 Power MOSFET (IXYS)
IXTK110N20L2 Power MOSFET (IXYS)
IXTK110N20L2 N-Channel MOSFET (INCHANGE)
IXTK120N20P PolarHT Power MOSFET (IXYS)
IXTK120N20P N-Channel MOSFET (INCHANGE)
