IXTP2N100 Datasheet - IXYS Corporation

IXTP2N100 Power MOSFET

High Voltage MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA2N100 IXTP2N100 VDSS = ID25 = ≤RDS(on) 1000V 2A 7Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-2.

IXTP2N100 Features

* z International Standard Packages z Avalanche Rated z Low Package Inductance (< 5nH) z Fast Switching Times Advantages z Easy to Mount z Space Savings z High Power Density Applications z Switched-Mode and Resonant-Mode Power Supplies z FlyBack Inverters z DC Choppers © 2009 IXYS CORPORATION, All Ri

IXTP2N100 Datasheet (141.22 KB)