IXTQ64N25P, IXTT64N25P Datasheet - IXYS Corporation

IXTQ64N25P PolarHT Power MOSFET

www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTQ 64N25P IXTT 64N25P VDSS ID25 RDS(on) = 250 V = 64 A = 48 mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 250 250 ± 20 V V V A A A mJ J V/ns W °C °C °C °C TO-3P (IXTQ) TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤.

IXTQ64N25P Features

* z z 1.13/10 Nm/lb.in. 5.5 5.0 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS

IXTT64N25P_IXYSCorporation.pdf