* / Advantages:
* Planar passivated chips
* Low leakage current
* Very short recovery time
* Improved thermal behaviour
* Very low Irm-values
* Very soft recovery behaviour
* Avalanche voltage rated for reliable operation
* Soft reverse recovery for low EMI/RFI
* Lo
DSEI60-12A Datasheet (332.35 KB)
DSEI60-12A
IXYS
332.35 KB
Fast recovery epitaxial diode.
FRED
Fast Recovery Epitaxial Diode Single Diode
Part number
DSEI60-12A
3
1
DSEI60-12A
VRRM = 1200 V
I FAV
=
60 A
t rr
=
50 ns
Backside: cat.
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