DSEI60-02A Datasheet (IXYS Corporation) - Fast Recovery Epitaxial Diode

DSEI60-02A - Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode (FRED) DSEI 60 IFAVM = 69 A VRRM = 200 V trr = 35 ns VRSM V 200 VRRM V 200 Type A C TO-247 AD C DSEI 60-02A A C A = Anode, C = Cathode Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep.

rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 98 69 800 600 650 540 580 1800 1770 1460 1410 -40+150 150 -40+150 A A A A A A A A2s A2s A2s A2s °C

DSEI60-02A Features

* q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine q q International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery