IXFH50N30Q3 - Power MOSFET
Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N30Q3 IXFH50N30Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting To.
IXFH50N30Q3 Features
* Low Intrinsic Gate Resistance
* International Standard Packages
* Low Package Inductance
* Fast Intrinsic Rectifier
* Low RDS(on) and QG
Advantages
* High Power Density
* Easy to Mount
* Space Savings
Applications
* DC-DC Converters
* Battery Chargers