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IXFH52N30P - PolarHT HiPerFET Power MOSFET

Features

  • z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max. 300 3.0 5.0 ±100 25 1000 66 V z V nA µA µA mΩ z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300.

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Datasheet Details

Part number IXFH52N30P
Manufacturer IXYS
File Size 709.23 KB
Description PolarHT HiPerFET Power MOSFET
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Advanced Technical Information PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode IXFH 52N30P IXFV 52N30P IXFV 52N30PS VDSS ID25 trr RDS(on) www.DataSheet4U.com = 300 V = 52 A ≤ 66 mΩ ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transinet TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 52 150 52 30 1.0 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C N/lb TO-247 (IXFH) G D S (TAB) PLUS220 (IXFV) G D S PLUS220SMD (IXFV__S) 1.6 mm (0.062 in.
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