Datasheet Specifications
- Part number
- IXFH52N30P
- Manufacturer
- IXYS
- File Size
- 709.23 KB
- Datasheet
- IXFH52N30P_IXYS.pdf
- Description
- PolarHT HiPerFET Power MOSFET
Description
Advanced Technical Information PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode IXFH 52N30P IXFV 52N30P IXFV.
Features
* z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max. 300 3.0 5.0 ±100 25 1000 66 V z V nA µA µA mΩ z InternationalIXFH52N30P Distributors
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