IXFH52N30P - PolarHT HiPerFET Power MOSFET

IXYS

Datasheet Details

Part number	IXFH52N30P
Manufacturer	IXYS
File Size	709.23 KB
Description	PolarHT HiPerFET Power MOSFET
Datasheet	IXFH52N30P_IXYS.pdf

z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max. 300 3.0 5.0 ±100 25 1000 66 V z V nA µA µA mΩ z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300.

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Published: Jun 19, 2010 |