Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK160N30T IXFX160N30T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 300V 160A 19mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ
Datasheet Details
Part number:
IXFK160N30T
Manufacturer:
IXYS
File Size:
161.99 KB
Description:
Gigamos power mosfet.