IXFK160N30T Datasheet - IXYS

IXFK160N30T, GigaMOS Power MOSFET

Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK160N30.

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IXFK160N30T_IXYS.pdf

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Datasheet Details

Part number:

IXFK160N30T

Manufacturer:

IXYS

File Size:

161.99 KB

Description:

GigaMOS Power MOSFET

Features

* z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS =

Applications

* z z z 50 µA 3 mA 19 mΩ z z z z DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications © 2009 IXYS CORPORATION, All rights reserved DS100127(03/09) www. DataSheet4U. com I

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IXFK160N30T GigaMOS Power MOSFET IXYS

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