IXFK16N90Q - Power MOSFET
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q VDSS = 900 V ID25 = 16 A RDS(on) = 0.65 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 I DM IAR E AR EAS dv/dt PD T J TJM T stg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM TC = 25°C T C = 25°C TC = 25°C I S ≤ I, DM di/dt.
IXFK16N90Q Features
* Symbol
VDSS VGS(th) I
GSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 0 V, ID = 250 µA
900
VDS = VGS, ID = 4 mA
3.0
V GS
=
±20
V, DC
V DS
=
0
VDS = VDSS V =0V
GS
TJ = 25°C
T J
=
125°C
VGS = 10 V, ID = 0.5