IXFK26N60Q Datasheet, Mosfet, IXYS

IXFK26N60Q Features

  • Mosfet l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 4.5 ± 200 25 1 0.25 V V nA µA mA Ω l l l l l V

PDF File Details

Part number:

IXFK26N60Q

Manufacturer:

IXYS

File Size:

124.22kb

Download:

📄 Datasheet

Description:

Hiperfet power mosfet.

Datasheet Preview: IXFK26N60Q 📥 Download PDF (124.22kb)
Rating: 1 (1 votes)
Page 2 of IXFK26N60Q

TAGS

IXFK26N60Q
HiPerFET
Power
MOSFET
IXYS

📁 Related Datasheet

IXFK26N90 - Power MOSFET (IXYS Corporation)
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 Symbol VDSS VDGR VG.

IXFK260N17T - GigaMOS Power MOSFET (IXYS)
Advance Technical Information .. GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK260N17.

IXFK260N17T - GigaMOS Power MOSFET (IXYS)
Advance Technical Information .. GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK260N17.

IXFK200N10P - Polar HiPerFET Power MOSFET (IXYS)
Advanced Technical Information .. PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFN 200N10P IXFK 200N10P IXFX 200N10P .

IXFK20N120 - HiPerFET Power MOSFETs (IXYS Corporation)
Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 20N120 IXFX 20N120 VDSS ID25 RDS(on) = 1200 V = 20 A = 0.75 Ω trr ≤ 300 ns Symbol .

IXFK20N120P - Power MOSFET (IXYS Corporation)
PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK20N120P IXFX20N120P D G S Symbol VDSS VDGR VGSS .

IXFK20N80Q - Power MOSFET (IXYS Corporation)
Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS V.

IXFK210N17T - GigaMOS Power MOSFET (IXYS)
Advance Technical Information .. GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK210N17.

IXFK210N17T - GigaMOS Power MOSFET (IXYS)
Advance Technical Information .. GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK210N17.

IXFK21N100F - Power MOSFET (IXYS Corporation)
HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr IXFK21.

Stock and price

part
IXYS Corporation
MOSFET N-CH 600V 26A TO264AA
DigiKey
IXFK26N60Q
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts