IXFK26N90, IXFK25N90 Datasheet - IXYS Corporation

IXFK26N90 - Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 Symbol VDSS VDGR VGSS VGSM ID25 IDM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case

IXFK26N90 Features

* z International standard packages z Avalanche Rated z Low package inductance z Low RDS(ON) HDMOS Process z Fast intrinsic diode Advantages z Easy to mount z Space savings z High power density Applications: z Switched-mode and resonant-mode power supplies z DC-DC Converters z Battery chargers z DC ch

IXFK25N90_IXYSCorporation.pdf