HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 Symbol VDSS VDGR VGSS VGSM ID25 IDM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case
Datasheet Details
Part number:
IXFK26N90, IXFK25N90
Manufacturer:
IXYS Corporation
File Size:
181.17 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFK26N90, IXFK25N90.
Please refer to the document for exact specifications by model.