* z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 100 1 0.16 V z z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 uA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID
IXFT32N50Q Datasheet (589.40 KB)
IXFT32N50Q
IXYS
589.40 KB
Power mosfet.
www.DataSheet4U.com
HiPerFETTM Power MOSFETs Q-Class
IXFH 32N50Q IXFT 32N50Q
VDSS
ID25
RDS(on)
500 V 32 A 0.16 Ω 500 V 32 A 0.16 Ω
trr ≤ 250 ns
.
📁 Related Datasheet
IXFT32N50 - Power MOSFET
(IXYS)
..
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500.
IXFT32N100XHV - Power MOSFET
(IXYS)
Preliminary Technical Information
X-Class HiPerFETTM Power MOSFET
IXFT32N100XHV IXFH32N100X IXFK32N100X
VDSS = ID25 = RDS(on)
1000V 32A 220m
N-.
IXFT320N10T2 - Power MOSFET
(IXYS Corporation)
TrenchT2TM HiperFETTM Power MOSFET
IXFH320N10T2 IXFT320N10T2
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
VDSS = ID25 =
RDS(on) .
IXFT30N40Q - Power MOSFET
(IXYS)
..
HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
IXFH 30N40Q IXFT 30N40Q
VDSS ID.
IXFT30N50 - Power MOSFET
(IXYS)
..
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500.
IXFT30N50P - Power MOSFET
(IXYS)
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS
V= .
IXFT30N50Q3 - Power MOSFET
(IXYS Corporation)
.DataSheet.co.kr
Advance Technical Information
HiperFETTM Power MOSFETs Q3-Class
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectif.
IXFT30N60P - Power MOSFET
(IXYS)
Advance Technical Information
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH 30N60P IXFT 30N60P.
