IXFX14N100 Datasheet - IXYS

IXFX14N100 - HiPerFET Power MOSFETs

www.DataSheet4U.com HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet IXFH/IXFT/IXFX14N100 1000 V 14 A 0.75 W IXFH/IXFT/IXFX15N100 1000 V 15 A 0.70 W trr £ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ .

IXFX14N100 Features

* q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance - easy to drive and to protect q Fast intrinsic Rectifier Applications q DC-DC converters q Battery chargers q Switched-mode

IXFX14N100_IXYS.pdf

IXFX14N100 Datasheet Preview — Preview of IXFX14N100 PDF

Datasheet Details

Part number:

IXFX14N100

Manufacturer:

IXYS

File Size:

142.32 KB

Description:

Hiperfet power mosfets.

IXFX14N100 Distributor

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IXFX14N100 HiPerFET Power MOSFETs IXYS