IXFX16N90 Datasheet, mosfets equivalent, IXYS

IXFX16N90 Features

• Mosfets l l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - eas

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Part number:

IXFX16N90

Manufacturer:

IXYS

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214.63kb

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📄 Datasheet

Description:

Hiperfet power mosfets.

IXFX16N90 Application

• Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.0 4.5 ±100 TJ = 25°C TJ = 125

TAGS

IXFX16N90

IXYS

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