IXFX170N20P - Power MOSFET
PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK170N20P IXFX170N20P VDSS = ID25 = RDS(on) 200V 170A 14m TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg L TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 200 V 200 V 20 V 30 V TC = 25C Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C 170 A 1
IXFX170N20P Features
* Dynamic dv/dt Rating
* Avalanche Rated
* Fast Intrinsic Diode
* Low QG
* Low R DS(on)
* Low Drain-to-Tab Capacitance
* Low Package Inductance Advantages
* Easy to Mount
* Space Savings Applications
* DC-DC Converters
* Battery Chargers
* Switch-Mode