* z z 1.13/10 Nm/lb.in. 10 6 g g z Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 500 μA VDS = VGS, ID = 8 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0
IXFX80N50P Datasheet (146.79 KB)
IXFX80N50P
IXYS
146.79 KB
Polarhv hiperfet power mosfet.
Advance Technical Information
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK 80N50P IXFX 80N50.
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