IXGN72N60A3 Datasheet (IXYS) - Ultra Low Vsat PT IGBT

IXGN72N60A3, Ultra Low Vsat PT IGBT

Preliminary Technical Information GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching IXGN72N60A3 E VCES = IC110 = VCE(sat) ≤ 600V 68A 1.35V Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip capability) TC = 110°C Terminal Current Limit TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 3Ω Clamped inductive load TC = 25°C 50/60Hz IISOL ≤ 1mA

IXGN72N60A3 Features

* z Optimized for low conduction losses z Isolation voltage 3000 V~ z Square RBSOA z International standard package Advantages z High power density z Low gate drive requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballas