* Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF)
* Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated f
IXKC19N60C5 Datasheet (110.70 KB)
IXKC19N60C5
IXYS
110.70 KB
Power mosfet.
Advanced Technical Information
IXKC 19N60C5
CoolMOS™ 1) Power MOSFET
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhan.
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