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IXKC19N60C5 Power MOSFET

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Description

Advanced Technical Information IXKC 19N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhan.

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Datasheet Specifications

Part number
IXKC19N60C5
Manufacturer
IXYS
File Size
110.70 KB
Datasheet
IXKC19N60C5-IXYS.pdf
Description
Power MOSFET

Features

* Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF)
* Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated f

Applications

* Switched mode power supplies (SMPS)
* Uninterruptible power supplies (UPS)
* Power factor correction (PFC)
* Welding
* Inductive heating
* PDP and LCD adapter Advantages
* Easy assembly: no screws or isolation foils required
* Space s

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