IXSQ10N60B2D1 High Speed IGBT with Diode

IXYS

Description

www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 10N60B2D1 IXSQ 10N60B2D1 VCES = 600 V I C25.

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Datasheet Specifications

Part number: IXSQ10N60B2D1
Manufacturer: IXYS
File Size: 631.02 KB
Datasheet: IXSQ10N60B2D1_IXYS.pdf
Description: High Speed IGBT with Diode

Features

* International standard package
* Guaranteed Short Circuit SOA capability
* Low VCE(sat) - for low on-state conduction losses
* High current handling capability
* MOS Gate turn-on - drive simplicity
* Fast fall time for switching speeds up to 20 kHz A

Applications

* AC motor speed control
* Uninterruptible power supplies (UPS)
* Welding Advantages
* High power density BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 750 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ± 20 V IC = 10A, VGE = 15 V DS99236(10/0

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IXSQ10N60B2D1 High Speed IGBT with Diode IXYS

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