Datasheet4U Logo Datasheet4U.com

IXSQ10N60B2D1

High Speed IGBT with Diode

IXSQ10N60B2D1 Features

* International standard package

* Guaranteed Short Circuit SOA capability

* Low VCE(sat) - for low on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity

* Fast fall time for switching speeds up to 20 kHz A

IXSQ10N60B2D1 Datasheet (631.02 KB)

Preview of IXSQ10N60B2D1 PDF

Datasheet Details

Part number:

IXSQ10N60B2D1

Manufacturer:

IXYS

File Size:

631.02 KB

Description:

High speed igbt with diode.
www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 10N60B2D1 IXSQ 10N60B2D1 VCES = 600 V I C25.

📁 Related Datasheet

IXSA10N60B2D1 High Speed IGBT (IXYS Corporation)

IXSA15N120B High Voltage IGBT (IXYS Corporation)

IXSA16N60 Short Circuit SOA Capability (IXYS Corporation)

IXSA20N60B2D1 High Speed IGBT (IXYS Corporation)

IXSH10N60B2D1 High-Speed IGBT (IXYS)

IXSH15N120A IGBT (IXYS Corporation)

IXSH15N120AU1 IGBT (IXYS Corporation)

IXSH15N120B High-Voltage IGBT (IXYS)

IXSH15N120BD1 Improved SCSOA Capability (IXYS Corporation)

IXSH16N60U1 IGBT (IXYS)

TAGS

IXSQ10N60B2D1 High Speed IGBT with Diode IXYS

Image Gallery

IXSQ10N60B2D1 Datasheet Preview Page 2 IXSQ10N60B2D1 Datasheet Preview Page 3

IXSQ10N60B2D1 Distributor