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IXSQ10N60B2D1 - High Speed IGBT with Diode

IXYS

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Datasheet Details

Part number	IXSQ10N60B2D1
Manufacturer	IXYS
File Size	631.02 KB
Description	High Speed IGBT with Diode
Datasheet	IXSQ10N60B2D1_IXYS.pdf

IXSQ10N60B2D1 Product details

Features

International standard package.
Guaranteed Short Circuit SOA capability.
Low VCE(sat) - for low on-state conduction losses.
High current handling capability.
MOS Gate turn-on - drive simplicity.
Fast fall time for switching speeds up to 20 kHz.

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Published: Jun 19, 2010 |