IXTA76N25T - Power MOSFET
TrenchTM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T VDSS = ID25 = RDS(on) 250V 76A 44m Typical Avalanched BV = 300V TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 250 V 250 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limite.
IXTA76N25T Features
* Avalanche Rated
* High Current Handling Capability
* Fast Intrinsic Rectifier
* Low RDS(on)
Advantages
* Easy to Mount
* Space Savings
* High Power Density
Applications
* DC-DC Converters
* Battery Chargers
* Switch-Mode and Resonant-Mode
Power Supplies