IXTH130N20T, IXTQ130N20T Datasheet - IXYS

IXTH130N20T - Power MOSFET

TrenchTM Power MOSFET IXTQ130N20T IXTH130N20T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 1

IXTH130N20T Features

* High Current Handling Capability

* Avalanche Rated

* Fast Intrinsic rectifier

* Low RDS(on) Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* DC-DC Converters

* Battery Chargers

* Switch-Mode and Resonant-Mode Power Supplies

IXTQ130N20T-IXYS.pdf