IXTH30N50L Datasheet - IXYS

IXTH30N50L Power MOSFET

Preliminary Technical Information Power MOSFET with Extended FBSOA N-Channel Enhancement Mode IXTH30N50L IXTQ30N50L IXTT30N50L D O DD Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.063in) from case for 10s Plastic body for 10s Mounting torque (TO-247, TO-3P) TO-247 TO-3P TO-268 RGi G O .

IXTH30N50L Features

* z Designed for linear operation z International standard packages z Unclamped Inductive Switching (UIS) rated. z Molding epoxies meet UL 94 V-0 flammability classification z Integrated gate resistor for easy paralleling z Guaranteed FBSOA at 75°C Applications z Solid state circuit breakers z Soft st

IXTH30N50L-IXYS.pdf